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FDMC8200
onsemi

FDMC8200

MFR #FDMC8200

FPN#FDMC8200-FL

MFRonsemi

Part DescriptionMosfet Array 30V 8A, 12A 700mW, 900mW Surface Mount 8-Power33 (3x3)
Datasheet
100615-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC8200
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance660pF, 1570pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current8A (Ta), 18A (Tc), 12A (Ta), 18A (Tc)
Maximum Drain to Source Resistance20 mOhm @ 6A, 10V, 9.5 mOhm @ 9A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation700mW (Ta), 900mW (Ta)
Maximum Pulse Drain Current40A
Maximum Total Gate Charge10nC, 22nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-WDFN (3x3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1nC, 1.5nC
Typical Gate to Source Charge1.8nC, 4.1nC