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FDMC8200
MFR #FDMC8200
FPN#FDMC8200-FL
MFRonsemi
Part DescriptionMosfet Array 30V 8A, 12A 700mW, 900mW Surface Mount 8-Power33 (3x3)
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMC8200 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 660pF, 1570pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 8A (Ta), 18A (Tc), 12A (Ta), 18A (Tc) |
| Maximum Drain to Source Resistance | 20 mOhm @ 6A, 10V, 9.5 mOhm @ 9A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 700mW (Ta), 900mW (Ta) |
| Maximum Pulse Drain Current | 40A |
| Maximum Total Gate Charge | 10nC, 22nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 8-WDFN (3x3) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 1nC, 1.5nC |
| Typical Gate to Source Charge | 1.8nC, 4.1nC |