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FDMC8010DC
onsemi

FDMC8010DC

MFR #FDMC8010DC

FPN#FDMC8010DC-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 37A (Ta) 3W (Ta) Surface Mount, 8-PQFN
Datasheet
44639-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC8010DC
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance7080pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current157A (Tc)
Maximum Drain to Source Resistance1.28 mOhm @ 37A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation50W
Maximum Pulse Drain Current788A
Maximum Total Gate Charge94nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7.5nC
Typical Gate to Source Charge10nC