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FDMC7672S
onsemi

FDMC7672S

MFR #FDMC7672S

FPN#FDMC7672S-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 14.8A (Ta), 18A (Tc) 8-SON T/R
Datasheet
100956-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC7672S
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2520pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current14.8A (Ta), 18A (Tc)
Maximum Drain to Source Resistance6 mOhm @ 14.8A, 10V
Maximum Gate to Source Threshold Voltage3V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.3W (Ta), 36W (Tc)
Maximum Pulse Drain Current45A
Maximum Total Gate Charge42nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 71% from Suppliers use this Dimension
Package Type8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4nC
Typical Gate to Source Charge5.3nC