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FDMC6696P
onsemi

FDMC6696P

MFR #FDMC6696P

FPN#FDMC6696P-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 18A (Ta), 75A (Tc) 8-SON T/R
Datasheet
101177-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC6696P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance10550pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current18A (Ta), 75A (Tc)
Maximum Drain to Source Resistance4.9 mOhm @ 18A, 4.5V
Maximum Gate to Source Threshold Voltage1.6V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.4W (Ta), 40W (Tc)
Maximum Pulse Drain Current335A
Maximum Total Gate Charge109nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 71% from Suppliers use this Dimension
Package Type8-PQFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge24nC
Typical Gate to Source Charge12nC