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FDMC6686P
onsemi

FDMC6686P

MFR #FDMC6686P

FPN#FDMC6686P-FL

MFRonsemi

Part DescriptionMOSFET P-CH 20V 18A/56A 8PQFN
Datasheet
198385-Datasheet
Quote Only
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Multiples of: 3000
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC6686P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package Type8-PQFN (3.3x3.3)
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance13200pF
Input Capacitance Test Voltage10V
Maximum Continuous Drain Current18A (Ta), 56A (Tc)
Maximum Drain to Source Resistance4 mOhm @ 18A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.3W (Ta), 40W (Tc)
Maximum Pulse Drain Current377A
Maximum Total Gate Charge122nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge24nC
Typical Gate to Source Charge14nC