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FDMC6675BZ
onsemi

FDMC6675BZ

MFR #FDMC6675BZ

FPN#FDMC6675BZ-FL

MFRonsemi

Part DescriptionP-Channel 30 V 9.5A (Ta), 20A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP
Datasheet
44635-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC6675BZ
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive (NRND)
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance2865pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current9.5A (Ta), 20A (Tc)
Maximum Drain to Source Resistance14.4 mOhm @ 9.5A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.3W (Ta), 36W (Tc)
Maximum Pulse Drain Current32A
Maximum Total Gate Charge65nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-WDFN (3.2x3.2)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge13nC
Typical Gate to Source Charge6.4nC