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FDMC5614P-B8
onsemi

FDMC5614P-B8

MFR #FDMC5614P-B8

FPN#FDMC5614P-B8-FL

MFRonsemi

Part DescriptionFET -60V 100.0 MOHM MLP33
Datasheet
99749-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC5614P
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1055pF
Input Capacitance Test Voltage30V
Life Cycle StatusObsolete
Maximum Continuous Drain Current5.7A (Ta), 13.5A (Tc)
Maximum Drain to Source Resistance100 mOhm @ 5.7A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.1W (Ta), 42W (Tc)
Maximum Pulse Drain Current23A
Maximum Total Gate Charge20nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.7nC
Typical Gate to Source Charge1.6nC