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FDMC510P
onsemi

FDMC510P

MFR #FDMC510P

FPN#FDMC510P-FL

MFRonsemi

Part DescriptionMOSFET, Power, 20V P-Channel, MLP 3.3x3.3
Datasheet
44633-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC510P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage1.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance7860pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current12A (Ta), 18A (Tc)
Maximum Drain to Source Resistance8 mOhm @ 12A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.3W (Ta), 41W (Tc)
Maximum Pulse Drain Current50A
Maximum Total Gate Charge116nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package Type8-WDFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge20.4nC
Typical Gate to Source Charge6.3nC