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FDMC4435BZ-F127
MFR #FDMC4435BZ-F127
FPN#FDMC4435BZ-F127-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 30V 8.5A (Ta) 18A (Tc) Surface Mount, 8-WDFN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMC4435BZ-F127 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±25V |
| Input Capacitance | 2040pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 8.5A (Ta), 18A (Tc) |
| Maximum Drain to Source Resistance | 20 mOhm @ 8.5A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 2.3W (Ta), 31W (Tc) |
| Maximum Pulse Drain Current | 50A |
| Maximum Total Gate Charge | 53nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 8-WDFN (3.2x3.2) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 11nC |
| Typical Gate to Source Charge | 4.3nC |