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FDMC15N06
MFR #FDMC15N06
FPN#FDMC15N06-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 55V 2.4A (Ta) 15A (Tc) Surface Mount, 8-DFN
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FDMC15N06 |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Obsolete |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 55V |
Drive Voltage | 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 350pF |
Input Capacitance Test Voltage | 25V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 2.4A (Ta), 15A (Tc) |
Maximum Drain to Source Resistance | 900 mOhm @ 15A, 10V |
Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 2.3W (Ta), 35W (Tc) |
Maximum Pulse Drain Current | 60A |
Maximum Total Gate Charge | 11.5nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
PK Package Dimensions Note | Popular package size 71% from Suppliers use this Dimension |
Package Type | 8-MLP (3.3x3.3) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 3.6nC |
Typical Gate to Source Charge | 1.7nC |