(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDMC007N30D
onsemi

FDMC007N30D

MFR #FDMC007N30D

FPN#FDMC007N30D-FL

MFRonsemi

Part DescriptionMosfet Array 2 N-Channel (Dual) 30V 46A 1.9W, 2.5W Surface Mount 8-Power33 (3x3)
Datasheet
44620-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMC007N30D
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance1110pF, 2360pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current46A
Maximum Drain to Source Resistance11.6 mOhm @ 10A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.9W (Ta), 2.5W (Ta)
Maximum Pulse Drain Current113A, 302A
Maximum Total Gate Charge34nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3x3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.3nC, 2.7nC
Typical Gate to Source Charge1.7nC, 4.4nC