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FDMB3900AN
MFR #FDMB3900AN
FPN#FDMB3900AN-FL
MFRonsemi
Part DescriptionMosfet Array 25V 7A 800mW Surface Mount 8-MLP, MicroFET (3x1.9)
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMB3900AN |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 25V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 890pF |
| Input Capacitance Test Voltage | 13V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 7A |
| Maximum Drain to Source Resistance | 23 mOhm @ 7A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 800mW |
| Maximum Pulse Drain Current | 28A |
| Maximum Total Gate Charge | 17nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | 8-WDFN (3x1.9) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 3nC |
| Typical Gate to Source Charge | 2nC |