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FDMB3900AN

FDMB3900AN

MFR #FDMB3900AN

FPN#FDMB3900AN-FL

MFRonsemi

Part DescriptionMosfet Array 25V 7A 800mW Surface Mount 8-MLP, MicroFET (3x1.9)
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMB3900AN
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage25V
Drive Voltage4.5V, 10V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance890pF
Input Capacitance Test Voltage13V
Life Cycle StatusObsolete
Maximum Continuous Drain Current7A
Maximum Drain to Source Resistance23 mOhm @ 7A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation800mW
Maximum Pulse Drain Current28A
Maximum Total Gate Charge17nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-WDFN (3x1.9)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3nC
Typical Gate to Source Charge2nC