FDMB3800N-P
MFR #FDMB3800N-P
FPN#FDMB3800N-P-FL
MFRonsemi
Part DescriptionMosfet Array 30V 4.8A 750mW Surface Mount 8-MLP, MicroFET (3x1.9)
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMB3800N |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Last Time Buy |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 465pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Last Time Buy |
| Maximum Continuous Drain Current | 4.8A (Ta) |
| Maximum Drain to Source Resistance | 40 mOhm @ 4.8A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 750mW (Ta) |
| Maximum Pulse Drain Current | 9A |
| Maximum Total Gate Charge | 5.6nC |
| Maximum Total Gate Charge Test Voltage | 5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 8-MLP, MicroFET (3x1.9) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 1.5nC |
| Typical Gate to Source Charge | 1nC |