FDMA6676PZ
MFR #FDMA6676PZ
FPN#FDMA6676PZ-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 30V 11A (Ta) 6-SON T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMA6676PZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±25V |
| Input Capacitance | 2160pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 11A (Ta) |
| Maximum Drain to Source Resistance | 13.5 mOhm @ 11A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.6V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 2.4W (Ta) |
| Maximum Pulse Drain Current | 165A |
| Maximum Total Gate Charge | 46nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 6-PQFN (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 13nC |
| Typical Gate to Source Charge | 4.5nC |