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onsemi
FDMA430NZ
MFR #FDMA430NZ
FPN#FDMA430NZ-FL
MFRonsemi
Part DescriptionOSFET N-Channel Single 30V 5A (Ta) 6-SON
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMA430NZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Last Time Buy |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 2.5V, 4.5V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±12V |
| Input Capacitance | 800pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 5A (Ta) |
| Maximum Drain to Source Resistance | 40 mOhm @ 5A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 2.4W (Ta) |
| Maximum Pulse Drain Current | 20A |
| Maximum Total Gate Charge | 11nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 6-MicroFET (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 1.9nC |
| Typical Gate to Source Charge | 2nC |
