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FDMA410NZT
onsemi

FDMA410NZT

MFR #FDMA410NZT

FPN#FDMA410NZT-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 20V 9.5A (Ta) 6-SON T/R
Datasheet
44610-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDMA410NZT
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusLast Time Buy
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage20V
Drive Voltage1.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance1310pF
Input Capacitance Test Voltage10V
Life Cycle StatusLast Time Buy
Maximum Continuous Drain Current9.5A (Ta)
Maximum Drain to Source Resistance23 mOhm @ 9.5A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation900mW (Ta)
Maximum Pulse Drain Current63A
Maximum Total Gate Charge14nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type6-UDFN (2.05x2.05)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC
Typical Gate to Source Charge1.2nC