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onsemi
FDMA410NZ
MFR #FDMA410NZ
FPN#FDMA410NZ-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 20V 9.5A (Ta) 2.4W (Ta) Surface Mount, 6-WDFN
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDMA410NZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 1.5V, 4.5V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±8V |
| Input Capacitance | 1080pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 9.5A (Ta) |
| Maximum Drain to Source Resistance | 23 mOhm @ 9.5A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 2.4W (Ta) |
| Maximum Pulse Drain Current | 24A |
| Maximum Total Gate Charge | 14nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | 6-MicroFET (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 2nC |
| Typical Gate to Source Charge | 1.2nC |
