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FDI038AN06A0
onsemi

FDI038AN06A0

MFR #FDI038AN06A0

FPN#FDI038AN06A0-FL

MFRonsemi

Part DescriptionN-Channel 60 V 17A (Ta), 80A (Tc) 310W (Tc) Through Hole I2PAK (TO-262)
Datasheet
44599-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDI038AN06A0
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance6400pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current17A (Ta), 80A (Tc)
Maximum Drain to Source Resistance3.8 mOhm @ 80A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation310W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge124nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeI2PAK (TO-262)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge27nC
Typical Gate to Source Charge26nC