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FDG6335N

MFR #FDG6335N

FPN#FDG6335N-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 20V 700mA Surface Mount, 6-TSSOP
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDG6335N
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage20V
Drive Voltage4.5V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage12V
Input Capacitance113pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current700mA
Maximum Drain to Source Resistance300 mOhm @ 700mA, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation300mW
Maximum Pulse Drain Current2.1A
Maximum Total Gate Charge1.4nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSC-88/SC70-6/SOT-363
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge300pC
Typical Gate to Source Charge240pC