
FDG6335N
MFR #FDG6335N
FPN#FDG6335N-FL
MFRonsemi
Part DescriptionMOSFET 2 N-Channel 20V 700mA Surface Mount, 6-TSSOP
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FDG6335N |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Obsolete |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | 2 N-Channel |
Drain Source Voltage | 20V |
Drive Voltage | 4.5V |
FET Feature | Logic Level Gate |
FET Options | N/R |
FET Type | Array |
Gate to Source Voltage | 12V |
Input Capacitance | 113pF |
Input Capacitance Test Voltage | 10V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 700mA |
Maximum Drain to Source Resistance | 300 mOhm @ 700mA, 4.5V |
Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 300mW |
Maximum Pulse Drain Current | 2.1A |
Maximum Total Gate Charge | 1.4nC |
Maximum Total Gate Charge Test Voltage | 4.5V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | SC-88/SC70-6/SOT-363 |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 300pC |
Typical Gate to Source Charge | 240pC |