(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

FDG6332C-F085

MFR #FDG6332C-F085

FPN#FDG6332C-F085-FL

MFRonsemi

Part DescriptionMOSFET N and P-Channel 20V 700mA (Ta), 600mA (Ta) SOT-363 T/R
Datasheet
99745-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDG6332C_F085
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage20V
Drive Voltage4.5V
FET FeatureStandard
FET OptionsComplementary
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance113pF, 114pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current700mA, 600mA
Maximum Drain to Source Resistance300 mOhm @ 700mA, 4.5V, 420 mOhm @ 600mA, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation300mW
Maximum Pulse Drain Current2.1A, 2A
Maximum Total Gate Charge1.5nC, 2nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSC-88/SC70-6/SOT-363
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge300pC, 400pC
Typical Gate to Source Charge240pC, 300pC