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onsemi

FDG6332C

MFR #FDG6332C

FPN#FDG6332C-FL

MFRonsemi

Part DescriptionMOSFET 1 N-Channel, 1 P-Channel Array 20V 700mA (Ta), 600mA (Ta)SOT-363
Datasheet
44585-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDG6332C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureStandard
FET OptionsComplementary
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance113pF, 114pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current700mA (Ta), 600mA (Ta)
Maximum Drain to Source Resistance300 mOhm @ 700mA, 4.5V, 420 mOhm @ 600mA, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation300mW (Ta)
Maximum Pulse Drain Current2.1A, 2A
Maximum Total Gate Charge1.5nC, 2nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSC-88/SC70-6/SOT-363
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge300pC, 400pC
Typical Gate to Source Charge240pC, 300pC