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onsemi

FDG6322C

MFR #FDG6322C

FPN#FDG6322C-FL

MFRonsemi

Part DescriptionMOSFET 1 N-Channel, 1 P-Channel Array 25V 220mA (Ta), 410mA (Ta) SOT-363 T/R
Datasheet
44584-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDG6322C
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage25V
Drive Voltage2.7V, 4.5V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±8V
Input Capacitance9.5pF, 62pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current220mA (Ta), 410mA (Ta)
Maximum Drain to Source Resistance4 Ohm @ 220mA, 4.5V, 1.1 Ohm @ 410mA, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation300mW (Ta)
Maximum Pulse Drain Current650mA, 1.2A
Maximum Total Gate Charge400pC, 1.5nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSC-88/SC70-6/SOT-363
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge30pC, 290pC
Typical Gate to Source Charge120pC, 310pC