
FDG6320C
MFR #FDG6320C
FPN#FDG6320C-FL
MFRonsemi
Part DescriptionMOSFET N and P-Channel 25V 220mA (Ta), 140mA (Ta) SOT-363
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | FDG6320C | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 3000 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant | 
| RoHS Exemption Type | None, RoHS (2015/863) | 
| ROHS China | Compliant | 
| Reach Status | Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N and P-Channel | 
| Drain Source Voltage | 25V | 
| Drive Voltage | 2.7V, 4.5V | 
| FET Feature | Logic Level Gate | 
| FET Options | N/R | 
| FET Type | Array | 
| Gate to Source Voltage | ±8V | 
| Input Capacitance | 9.5pF, 12pF | 
| Input Capacitance Test Voltage | 10V | 
| Life Cycle Status | Obsolete | 
| Maximum Continuous Drain Current | 220mA (Ta), 140mA (Ta) | 
| Maximum Drain to Source Resistance | 4 Ohm @ 220mA, 4.5V, 10 Ohm @ 140mA, 4.5V | 
| Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Power Dissipation | 300mW (Ta) | 
| Maximum Pulse Drain Current | 650mA, 400mA | 
| Maximum Total Gate Charge | 400pC, 310pC | 
| Maximum Total Gate Charge Test Voltage | 4.5V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Package Type | SC-88/SC70-6/SOT-363 | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 30pC, 50pC | 
| Typical Gate to Source Charge | 120pC | 
