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onsemi

FDG6301N

MFR #FDG6301N

FPN#FDG6301N-FL

MFRonsemi

Part DescriptionMOSFET Array 2 N-Channel (Dual) 25V 220mA 300mW Surface Mount, SOT-363-6
Datasheet
44581-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDG6301N
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage25V
Drive Voltage2.7V, 4.5V
FET FeatureLogic Level Gate
FET OptionsN/R
FET TypeArray
Gate to Source Voltage8V
Input Capacitance9.5pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current220mA (Ta)
Maximum Drain to Source Resistance4 Ohm @ 220mA, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation300mW (Ta)
Maximum Pulse Drain Current650mA
Maximum Total Gate Charge400pC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSC-88/SC70-6/SOT-363
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge30pC
Typical Gate to Source Charge120pC