(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

FDFMA3P029Z

MFR #FDFMA3P029Z

FPN#FDFMA3P029Z-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 30V 3.3A (Ta) 6-SON
Datasheet
100717-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDFMA3P029Z
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureSchottky Diode (Isolated)
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance435pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current3.3A (Ta)
Maximum Drain to Source Resistance87 mOhm @ 3.3A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.4W (Ta)
Maximum Pulse Drain Current15A
Maximum Total Gate Charge10nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeMicroFET 2x2
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.9nC
Typical Gate to Source Charge1nC