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FDFMA3N109
onsemi

FDFMA3N109

MFR #FDFMA3N109

FPN#FDFMA3N109-FL

MFRonsemi

Part DescriptionN-Channel 30 V 2.9A (Tc) 1.5W (Ta) Surface Mount 6-MicroFET (2x2)
Datasheet
44570-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDFMA3N109
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage2.5V, 4.5V
FET FeatureSchottky Diode (Isolated)
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance220pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current2.9A (Tc)
Maximum Drain to Source Resistance123 mOhm @ 2.9A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.5W (Ta)
Maximum Pulse Drain Current10A
Maximum Total Gate Charge3nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge750pC
Typical Gate to Source Charge350pC