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FDFMA2P029Z-F106
onsemi

FDFMA2P029Z-F106

MFR #FDFMA2P029Z-F106

FPN#FDFMA2P029Z-F106-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 3.1A(Ta) 1.4W(Ta) Surface Mount, 6-DFN
Datasheet
44568-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDFMA2P029Z-F106
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance720pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current3.1A (Ta)
Maximum Drain to Source Resistance95 mOhm @ 3.1A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation700mW (Ta)
Maximum Pulse Drain Current6A
Maximum Total Gate Charge10nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package Type6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.4nC
Typical Gate to Source Charge1.1nC