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FDFMA2P029Z
MFR #FDFMA2P029Z
FPN#FDFMA2P029Z-FL
MFRonsemi
Part DescriptionP-Channel 20 V 3.1A (Ta) 1.4W (Tj) Surface Mount 6-MicroFET (2x2)
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FDFMA2P029Z |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Obsolete |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | P-Channel |
Drain Source Voltage | 20V |
Drive Voltage | 2.5V, 4.5V |
FET Feature | Schottky Diode (Isolated) |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±12V |
Input Capacitance | 720pF |
Input Capacitance Test Voltage | 10V |
Life Cycle Status | Obsolete |
Maximum Continuous Drain Current | 3.1A (Ta) |
Maximum Drain to Source Resistance | 95 mOhm @ 3.1A, 4.5V |
Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 700mW (Ta) |
Maximum Pulse Drain Current | 6A |
Maximum Total Gate Charge | 10nC |
Maximum Total Gate Charge Test Voltage | 4.5V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | 6-MicroFET (2x2) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 2.4nC |
Typical Gate to Source Charge | 1.1nC |