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FDFMA2P029Z
MFR #FDFMA2P029Z
FPN#FDFMA2P029Z-FL
MFRonsemi
Part DescriptionP-Channel 20 V 3.1A (Ta) 1.4W (Tj) Surface Mount 6-MicroFET (2x2)
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDFMA2P029Z |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 2.5V, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±12V |
| Input Capacitance | 720pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 3.1A (Ta) |
| Maximum Drain to Source Resistance | 95 mOhm @ 3.1A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 700mW (Ta) |
| Maximum Pulse Drain Current | 6A |
| Maximum Total Gate Charge | 10nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | 6-MicroFET (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 2.4nC |
| Typical Gate to Source Charge | 1.1nC |
