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FDD8882
onsemi

FDD8882

MFR #FDD8882

FPN#FDD8882-FL

MFRonsemi

Part DescriptionN-Channel 30 V 12.6A (Ta), 55A (Tc) 55W (Tc) Surface Mount TO-252AA
Datasheet
44562-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDD8882
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1260pF
Input Capacitance Test Voltage15V
Life Cycle StatusObsolete
Maximum Continuous Drain Current12.6A (Ta), 55A (Tc)
Maximum Drain to Source Resistance11.5 mOhm @ 35A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation55W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge33nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.6nC
Typical Gate to Source Charge3.7nC