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onsemi

FDD86369-01

MFR #FDD86369-01

FPN#FDD86369-01-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 80V 90A (Tc) TO-252-3
Datasheet
101768-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDD86369
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage80V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2530pF
Input Capacitance Test Voltage40V
Life Cycle StatusActive
Maximum Continuous Drain Current90A (Tc)
Maximum Drain to Source Resistance7.9 mOhm @ 80A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation150W (Tj)
Maximum Pulse Drain Current90A
Maximum Total Gate Charge54nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8.5nC
Typical Gate to Source Charge13nC