onsemi
FDD86367-F085
MFR #FDD86367-F085
FPN#FDD86367-F085-FL
MFRonsemi
Part DescriptionMOSFET N-CH 80V 100A DPAK
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDD86367_F085 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | TO-252 (DPAK) |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 80V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 4840pF |
| Input Capacitance Test Voltage | 40V |
| Maximum Continuous Drain Current | 100A (Tc) |
| Maximum Drain to Source Resistance | 4.2 mOhm @ 80A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Operating Temperature | 175°C |
| Maximum Power Dissipation | 227W (Tj) |
| Maximum Pulse Drain Current | 100A |
| Maximum Total Gate Charge | 88nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 14nC |
| Typical Gate to Source Charge | 22nC |