onsemi
FDD86113LZ
MFR #FDD86113LZ
FPN#FDD86113LZ-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 100V 4.2A(Ta) 5.5A(Tc) 3.1W(Ta) 29W(Tc) Surface Mount, TO-252-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDD86113LZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Active |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | TO-252 (DPAK) |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 100V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 285pF |
| Input Capacitance Test Voltage | 50V |
| Maximum Continuous Drain Current | 4.2A (Ta), 5.5A (Tc) |
| Maximum Drain to Source Resistance | 104 mOhm @ 4.2A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 3.1W (Ta), 29W (Tc) |
| Maximum Pulse Drain Current | 15A |
| Maximum Total Gate Charge | 6nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 700pC |
| Typical Gate to Source Charge | 600pC |