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FDD850N10L
onsemi

FDD850N10L

MFR #FDD850N10L

FPN#FDD850N10L-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 15.7A (Tc) TO-252-3 T/R
Datasheet
136960-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDD850N10L
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusLast Time Buy
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1465pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current15.7A (Tc)
Maximum Drain to Source Resistance75 mOhm @ 12A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation50W (Tc)
Maximum Pulse Drain Current63A
Maximum Total Gate Charge28.9nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.7nC
Typical Gate to Source Charge3nC