onsemi
FDD8453LZ
MFR #FDD8453LZ
FPN#FDD8453LZ-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 40V 16.4A (Ta) 50A (Tc) 65W (Tc) Surface Mount, TO-252-3
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDD8453LZ |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Package Type | TO-252 (DPAK) |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 40V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 3515pF |
| Input Capacitance Test Voltage | 20V |
| Maximum Continuous Drain Current | 16.4A (Ta), 50A (Tc) |
| Maximum Drain to Source Resistance | 6.7 mOhm @ 15A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 3.1W (Ta), 65W (Tc) |
| Maximum Pulse Drain Current | 100A |
| Maximum Total Gate Charge | 64nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 8nC |
| Typical Gate to Source Charge | 7nC |