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onsemi

FDD8424H

MFR #FDD8424H

FPN#FDD8424H-FL

MFRonsemi

Part DescriptionMOSFET Array N and P-Channel 40V 9A, 6.5A 1.3W Surface Mount, TO-252-4
Datasheet
44551-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDD8424H
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN and P-Channel, Common Drain
Drain Source Voltage40V
Drive Voltage10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input Capacitance1000pF
Input Capacitance Test Voltage20V
Life Cycle StatusObsolete
Maximum Continuous Drain Current9A, 6.5A
Maximum Drain to Source Resistance24 mOhm @ 9A, 10V, 54 mOhm @ 6.5A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.3W
Maximum Pulse Drain Current55A
Maximum Total Gate Charge20nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252-4
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.2nC
Typical Gate to Source Charge3nC