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FDD5353
MFR #FDD5353
FPN#FDD5353-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 60V 11.5A (Ta), 50A (Tc) TO-252-3 T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDD5353 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 2500 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 3215pF |
| Input Capacitance Test Voltage | 30V |
| Life Cycle Status | Active (NRND) |
| Maximum Continuous Drain Current | 11.5A (Ta), 50A (Tc) |
| Maximum Drain to Source Resistance | 12.3 mOhm @ 10.7A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | 150°C |
| Maximum Power Dissipation | 3.1W (Ta), 69W (Tc) |
| Maximum Pulse Drain Current | 100A |
| Maximum Total Gate Charge | 65nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | TO-252 (DPAK) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 9nC |
| Typical Gate to Source Charge | 7nC |