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onsemi

FDD4N60NZ

MFR #FDD4N60NZ

FPN#FDD4N60NZ-FL

MFRonsemi

Part DescriptionPower Field-Effect Transistor, 3.4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Datasheet
192664-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDD4N60NZ
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance510pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current3.4A (Tc)
Maximum Drain to Source Resistance2.5 Ohm @ 1.7A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation114W (Tc)
Maximum Pulse Drain Current13.6A
Maximum Total Gate Charge10.8nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3.3nC
Typical Gate to Source Charge2.1nC