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FDD4141-F085
onsemi

FDD4141-F085

MFR #FDD4141-F085

FPN#FDD4141-F085-FL

MFRonsemi

Part DescriptionMOSFET P-Channel Single 40V 10.8A (Ta), 50A (Tc) TO-252-3
Datasheet
44534-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDD4141_F085
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage40V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2775pF
Input Capacitance Test Voltage20V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10.8A (Ta), 50A (Tc)
Maximum Drain to Source Resistance12.3 mOhm @ 12.7A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation2.4W (Ta), 69W (Tc)
Maximum Pulse Drain Current100A
Maximum Total Gate Charge50nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8nC
Typical Gate to Source Charge7nC