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FDD3672
onsemi

FDD3672

MFR #FDD3672

FPN#FDD3672-FL

MFRonsemi

Part DescriptionMOSFET N-Channel Single 100V 6.5A (Ta), 44A (Tc), TO-252-3
Datasheet
44530-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDD3672
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage6V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1710pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current6.5A (Ta), 44A (Tc)
Maximum Drain to Source Resistance28 mOhm @ 44A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation135W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge36nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.6nC
Typical Gate to Source Charge8.6nC