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onsemi

FDD306P

MFR #FDD306P

FPN#FDD306P-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 12V 6.7A(Ta) 52W(Ta) Surface Mount, TO-252-3
Datasheet
44529-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDD306P
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage12V
Drive Voltage1.8V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance1290pF
Input Capacitance Test Voltage6V
Life Cycle StatusActive
Maximum Continuous Drain Current6.7A (Ta)
Maximum Drain to Source Resistance28 mOhm @ 6.7A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation1.6W (Ta)
Maximum Pulse Drain Current54A
Maximum Total Gate Charge21nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.4nC
Typical Gate to Source Charge2nC