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FDC642P-F085
onsemi

FDC642P-F085

MFR #FDC642P-F085

FPN#FDC642P-F085-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 4A (Ta) TSOT-23-6
Datasheet
99721-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDC642P_F085
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance630pF
Input Capacitance Test Voltage10V
Life Cycle StatusObsolete
Maximum Continuous Drain Current4A (Ta)
Maximum Drain to Source Resistance65 mOhm @ 4A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.2W (Ta)
Maximum Pulse Drain Current20A
Maximum Total Gate Charge9nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeTSOT-23-6
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.8nC
Typical Gate to Source Charge1.2nC