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FDC6401N
onsemi

FDC6401N

MFR #FDC6401N

FPN#FDC6401N-FL

MFRonsemi

Part DescriptionMOSFET 2 N-Channel 20V 3A (Ta) TSOT-23-6
Datasheet
145258-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDC6401N
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
Configuration2 N-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±12V
Input Capacitance324pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current3A (Ta)
Maximum Drain to Source Resistance70 mOhm @ 3A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation700mW
Maximum Pulse Drain Current12A
Maximum Total Gate Charge4.6nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeTSOT-23-6
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge700pC
Typical Gate to Source Charge950pC