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onsemi

FDC638APZ-PSBMS001

MFR #FDC638APZ-PSBMS001

FPN#FDC638APZ-PSBMS001-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 20V 4.5A (Ta) SOT-6
Datasheet
190632-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDC638APZ
Lifecycle StatusUnknown
RoHSCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±12V
Input Capacitance1000pF
Input Capacitance Test Voltage10V
Life Cycle StatusUnknown
Maximum Continuous Drain Current4.5A (Ta)
Maximum Drain to Source Resistance43 mOhm @ 4.5A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta)
Maximum Pulse Drain Current20A
Maximum Total Gate Charge12nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 30% from Suppliers use this Dimension
Package TypeSuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2nC
Typical Gate to Source Charge2nC