
FDC6333C
MFR #FDC6333C
FPN#FDC6333C-FL
MFRonsemi
Part DescriptionMosfet Array N and P-Channel 30V 2.5A, 2A 700mW Surface Mount, SOT-23-6
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FDC6333C |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Active |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
ROHS China | Compliant |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | N and P-Channel |
Drain Source Voltage | 30V |
Drive Voltage | 4.5V, 10V |
FET Feature | Standard |
FET Options | N/R |
FET Type | Array |
Gate to Source Voltage | ±16V, ±25V |
Input Capacitance | 282pF, 185pF |
Input Capacitance Test Voltage | 15V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 2.5A (Ta), 2A (Ta) |
Maximum Drain to Source Resistance | 95 mOhm @ 2.5A, 10V, 130 mOhm @ 2A, 10V |
Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 700mW (Ta) |
Maximum Pulse Drain Current | 8A |
Maximum Total Gate Charge | 6.6nC, 5.7nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | TSOT-23-6 |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 600pC, 400pC |
Typical Gate to Source Charge | 900pC, 800pC |