
onsemi
FDC6333C
MFR #FDC6333C
FPN#FDC6333C-FL
MFRonsemi
Part DescriptionMosfet Array N and P-Channel 30V 2.5A, 2A 700mW Surface Mount, SOT-23-6
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDC6333C |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N and P-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Standard |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±16V, ±25V |
| Input Capacitance | 282pF, 185pF |
| Input Capacitance Test Voltage | 15V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 2.5A (Ta), 2A (Ta) |
| Maximum Drain to Source Resistance | 95 mOhm @ 2.5A, 10V, 130 mOhm @ 2A, 10V |
| Maximum Gate to Source Threshold Voltage | 3V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 700mW (Ta) |
| Maximum Pulse Drain Current | 8A |
| Maximum Total Gate Charge | 6.6nC, 5.7nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | TSOT-23-6 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 600pC, 400pC |
| Typical Gate to Source Charge | 900pC, 800pC |
