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FDC6310P
onsemi

FDC6310P

MFR #FDC6310P

FPN#FDC6310P-FL

MFRonsemi

Part DescriptionMOSFET 2P-CH 20V 2.2A SSOT6
Datasheet
139620-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDC6310P
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Package TypeTSOT-23-6
Channel ModeEnhancement
Configuration2 P-Channel
Drain Source Voltage20V
Drive Voltage2.5V, 4.5V
FET FeatureLogic Level Gate, 2.5V Drive
FET OptionsN/R
FET TypeArray
Gate to Source Voltage12V
Input Capacitance337pF
Input Capacitance Test Voltage10V
Maximum Continuous Drain Current2.2A (Ta)
Maximum Drain to Source Resistance125 mOhm @ 2.2A, 4.5V
Maximum Gate to Source Threshold Voltage1.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation700mW (Ta)
Maximum Pulse Drain Current6A
Maximum Total Gate Charge5.2nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.3nC
Typical Gate to Source Charge650pC