FDC6306P
MFR #FDC6306P
FPN#FDC6306P-FL
MFRonsemi
Part DescriptionMOSFET Array 20V 1.9A 700mW Surface Mount, TSOT-23-6
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDC6306P |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 P-Channel |
| Drain Source Voltage | 20V |
| Drive Voltage | 4.5V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | 8V |
| Input Capacitance | 441pF |
| Input Capacitance Test Voltage | 10V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 1.9A |
| Maximum Drain to Source Resistance | 170 mOhm @ 1.9A, 4.5V |
| Maximum Gate to Source Threshold Voltage | 1.5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 700mW |
| Maximum Pulse Drain Current | 5A |
| Maximum Total Gate Charge | 4.2nC |
| Maximum Total Gate Charge Test Voltage | 4.5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TSOT-23-6 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 800pC |
| Typical Gate to Source Charge | 700pC |