(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDC610PZ-G
onsemi

FDC610PZ-G

MFR #FDC610PZ-G

FPN#FDC610PZ-G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 30V 4.9A(Ta) 1.6W(Ta) Surface Mount, TSOT-23-6
Datasheet
100591-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDC610PZ
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance1005pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current4.9A (Ta)
Maximum Drain to Source Resistance42 mOhm @ 4.9A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation800mW (Ta)
Maximum Pulse Drain Current20A
Maximum Total Gate Charge24nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTSOT-23-6
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.3nC
Typical Gate to Source Charge2.9nC