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FDC610PZ-G
onsemi

FDC610PZ-G

MFR #FDC610PZ-G

FPN#FDC610PZ-G-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 30V 4.9A(Ta) 1.6W(Ta) Surface Mount, TSOT-23-6
Datasheet
100591-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDC610PZ
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863), Unknown
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance1005pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current4.9A (Ta)
Maximum Drain to Source Resistance42 mOhm @ 4.9A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation800mW (Ta)
Maximum Pulse Drain Current20A
Maximum Total Gate Charge24nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTSOT-23-6
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.3nC
Typical Gate to Source Charge2.9nC