(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDC5661N-F085
onsemi

FDC5661N-F085

MFR #FDC5661N-F085

FPN#FDC5661N-F085-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 4.3A (Ta) SOT-23-6
Datasheet
44498-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDC5661N_F085
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive (NRND)
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance763pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current4.3A (Ta)
Maximum Drain to Source Resistance47 mOhm @ 4.3A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta)
Maximum Pulse Drain Current20A
Maximum Total Gate Charge19nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTSOT-23-6
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.9nC
Typical Gate to Source Charge2.4nC