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FDC5661N-F085
onsemi

FDC5661N-F085

MFR #FDC5661N-F085

FPN#FDC5661N-F085-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 60V 4.3A (Ta) SOT-23-6
Datasheet
44498-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDC5661N_F085
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive (NRND)
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance763pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive (NRND)
Maximum Continuous Drain Current4.3A (Ta)
Maximum Drain to Source Resistance47 mOhm @ 4.3A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation1.6W (Ta)
Maximum Pulse Drain Current20A
Maximum Total Gate Charge19nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTSOT-23-6
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.9nC
Typical Gate to Source Charge2.4nC