FDC3601N
MFR #FDC3601N
FPN#FDC3601N-FL
MFRonsemi
Part DescriptionMOSFET Array 2 N-Channel 100V 1A 700mW Surface Mount, TSOT-23-6
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FDC3601N |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 100V |
| Drive Voltage | 10V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 153pF |
| Input Capacitance Test Voltage | 50V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 1A |
| Maximum Drain to Source Resistance | 500 mOhm @ 1A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 700mW |
| Maximum Pulse Drain Current | 4A |
| Maximum Total Gate Charge | 5nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TSOT-23-6 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 1nC |
| Typical Gate to Source Charge | 800pC |