(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FDC2612
onsemi

FDC2612

MFR #FDC2612

FPN#FDC2612-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 200V 1.1A (Ta) TSOT-23-6
Datasheet
165422-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDC2612
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage200V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance234pF
Input Capacitance Test Voltage100V
Life Cycle StatusActive
Maximum Continuous Drain Current1.1A (Ta)
Maximum Drain to Source Resistance725 mOhm @ 1.1A, 10V
Maximum Gate to Source Threshold Voltage4.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.6W (Ta)
Maximum Pulse Drain Current4A
Maximum Total Gate Charge11nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTSOT-23-6
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.2nC
Typical Gate to Source Charge1.6nC