
FDC2612
MFR #FDC2612
FPN#FDC2612-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 200V 1.1A (Ta) TSOT-23-6
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | FDC2612 | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 3000 | 
| Lifecycle Status | Active | 
| RoHS | Compliant | 
| RoHS Exemption Type | None, RoHS (2015/863) | 
| ROHS China | Compliant | 
| Reach Status | Compliant | 
| Channel Mode | Enhancement | 
| Configuration | N-Channel | 
| Drain Source Voltage | 200V | 
| Drive Voltage | 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±20V | 
| Input Capacitance | 234pF | 
| Input Capacitance Test Voltage | 100V | 
| Life Cycle Status | Active | 
| Maximum Continuous Drain Current | 1.1A (Ta) | 
| Maximum Drain to Source Resistance | 725 mOhm @ 1.1A, 10V | 
| Maximum Gate to Source Threshold Voltage | 4.5V @ 250µA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 1.6W (Ta) | 
| Maximum Pulse Drain Current | 4A | 
| Maximum Total Gate Charge | 11nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Package Type | TSOT-23-6 | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 2.2nC | 
| Typical Gate to Source Charge | 1.6nC | 
